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用混合物理化学气相沉积法(Hybrid physical-chemical vapor deposition简称为HPCVD)制备了MgB2超薄膜.在背景气体压强、B2H6的流量和成膜时间等条件一定的情况下,当氢气的流量从200到400sccm范围内变化时,观察了其对成膜的影响.结果显示,随氢气流量增大,膜表面粗糙度增大,同时膜面的连接性变好,伴随着样品的超导转变温度得到提高.对于平均厚度是10nm和15nm的样品,氢气流量分别是200sccm和300sccm时,Tc分别是26K和33K与28K和37K.
MgB2 thin films were prepared by hybrid physical-chemical vapor deposition (HPCVD). Under the conditions of the background gas pressure, the flow rate of B2H6 and the film formation time, when the flow rate of hydrogen gas is from 200 to 400 sccm The results show that as the hydrogen flow rate increases, the surface roughness of the film increases, and the connectivity of the film surface becomes better, accompanied by the increase of the superconducting transition temperature of the sample. For samples with an average thickness of 10 nm and 15 nm, the Tc was 26 K and 33 K and 28 K and 37 K, respectively, at hydrogen flow rates of 200 seem and 300 seem respectively.