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采用NH4F/H2O2作为p-CZT晶片的表面钝化剂,对未钝化与钝化表面处理的p-CZT晶片的C-V特性进行了对比研究。用XPS分析了钝化前后CZT晶体表面成分,发现钝化后CZT晶片表面形成厚度为3.1 nm的TeO2氧化层。用Agilent 4294A高精度阻抗分析仪,在1MHz下对未钝化的和钝化的CZT晶片进行C-V测试。对测试结果的计算表明,钝化提高了Au与CZT接触的势垒高度b。未钝化的b为1.393 V,钝化后b变为1.512 V。
The NH4F / H2O2 was used as the surface passivator of p-CZT wafer, and the C-V properties of the un-passivated and passivated surface-treated p-CZT wafers were compared. The surface composition of the CZT crystal before and after passivation was analyzed by XPS. It was found that the surface of the CZT wafer after passivation formed a TeO2 oxide layer with a thickness of 3.1 nm. Un-passivated and passivated CZT wafers were C-V tested at 1 MHz using an Agilent 4294A precision impedance analyzer. Calculations of the test results show that the passivation increases the barrier height b at which Au is in contact with CZT. Unpassivated b is 1.393 V, and b 钝 becomes 1.512 V after passivation.