采用了一种用离子束增强沉积从V2 O5粉末直接制备VO2 薄膜的新方法 ,将纯度为 99 7%的V2 O5粉末压成溅射靶 ,在用Ar离子束溅射的同时 ,用氩氢混合束对沉积膜作高剂量离子注入 ,使沉积膜中V2 O5的V—O键断裂 ,进而被注入的氢还原 ,退火后获得热电阻温度系数 (TCR)高达 4 %的VO2 薄膜 .高剂量的氩氢混合束注入对薄膜引入应力 ,使薄膜的转换温度降低、电阻 温度曲线斜率变大 ,是薄膜TCR增大的原因 A new method for preparing VO2 thin films from V2 O5 powder by ion beam enhanced deposition was adopted. The V2 O5 powder with a purity of 99 7% was pressed into a sputtering target. While sputtering with Ar ion beam, The mixed beam infiltrated the deposited film by high dose ion implantation, which caused the V-O bonds of V2 O5 in the deposited film to rupture, then hydrogen was reduced by the injected hydrogen and annealed to obtain a VO2 thin film with a thermal resistance temperature coefficient (TCR) of 4% Argon-hydrogen mixed beam implanted into the film to introduce stress, so that the conversion temperature of the film decreases, the slope of the resistance temperature curve becomes larger, is the reason for the increase of the TCR of the film