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采用金属有机物化学气相沉积法(MOCVD)生长Ga As/Al0.3Ga0.7As量子阱材料,制备300μm×300μm台面,内电极压焊点面积为20μm×20μm,外电极压焊点面积为80μm×80μm单元量子阱器件两种。利用傅里叶光谱仪对1#,2#样品进行77K液氮温度光谱响应测试。实验结果显示1#,2#样品峰值响应波长分别为8.43μm,8.32μm,与根据薛定谔方程得到器件理论峰值波长8.5μm间误差分别为1.0%,2.1%。实验结果说明MOCVD技术可以满足QWIP生长制备工艺要求,且器件电极压焊点位置与面积大小对器件峰值波长影响不大,而对峰值电流有一定影响。
The GaAs / Al0.3Ga0.7As quantum well material was grown by metal organic chemical vapor deposition (MOCVD) to prepare a 300μm × 300μm mesa. The area of the internal electrodes was 20μm × 20μm, the area of the external electrodes was 80μm × 80μm Two kinds of unit quantum well devices. The spectral response of 77 # liquid nitrogen at 1 # and 2 # was measured by Fourier spectrometer. The experimental results show that the peak response wavelengths of 1 # and 2 # samples are 8.43μm and 8.32μm, respectively, and the error between them is 1.0% and 2.1%, respectively, based on the Schrödinger equation. The experimental results show that the MOCVD technology can meet the requirements of QWIP growth and preparation process, and the position and size of the device electrode pads have little effect on the device peak wavelength, but have a certain impact on the peak current.