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提出了采用调制热源，热沉边界条件下的超低频薄膜纵向热导率测试方法，结合金属薄膜的弱温度探测，使薄膜厚度方向的热导率测试进入到了亚微米量级．室温下 热导率采用了线性拟合外推法求得．实测的多孔 ＳｉＯ２薄膜热导率比致密的块体材料 低了 ３个量级，为 ０．００１Ｗ／ｍ·Ｋ．
The test method for the longitudinal thermal conductivity of the ultra-low frequency film under the conditions of modulated heat source and heat sink boundary is proposed. Combined with the weak temperature detection of the metal film, the thermal conductivity test in the direction of the film thickness is sub-micron. The thermal conductivity at room temperature was determined by linear extrapolation. The measured thermal conductivity of porous SiO2 film is 3 orders of magnitude lower than that of dense bulk materials, which is 0.001W / m · K.