基于宏力半导体公司0.18μm SiGe HBT工艺,提出了一种应用于UHF(860~960MHz)RFID频段的增益可控驱动放大器(DA)。电路采用全差分发射极电感负反馈共射共基(Cascode)结构,其中,增益控制由三对结构相同的共射电路通过外加偏压实现,增益可控的步长为3 dB。仿真结果显示,在1.8 V电源电压下、910 MHz频段处,增益(S21)分别达到17 dB、20 dB和23 dB,噪声系数(NF)分别为3 dB、2.6 dB和2.2 dB,并且实现了良好的输入输出匹配。 Based on Grace Semiconductor’s 0.18μm SiGe HBT process, a Gain Controllable Driver Amplifier (DA) for RFID frequency band of UHF (860 ~ 960MHz) is proposed. The circuit uses a fully differential emitter inductance negative feedback cascode structure, in which the gain control is achieved by applying three pairs of identical common-emitter circuits with an externally applied bias voltage with a gain-controlled step size of 3 dB. The simulation results show that the gain (S21) achieves 17 dB, 20 dB and 23 dB, respectively, with a noise figure (NF) of 3 dB, 2.6 dB and 2.2 dB respectively at 910 MHz in the 1.8 MHz supply and achieves Good input and output matching.