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报道了硅基有机微腔的电致发光 (EL) .该微腔由上半透明金属膜、中心有源多层膜和多孔硅分布Bragg反射镜(PS DBR)组成 .半透明金属膜由Ag( 2 0nm)构成 ,充当发光器件的负电极和微腔的上反射镜 .有源多层膜由Al ( 1nm) LiF( 0 5nm) Alq3 Alq3:DCJTB NPB CuPc ITO SiO2 组成 ,其中的Al LiF为电子注入层 ,ITO为正电极 ,SiO2 为使正、负电极电隔离的介质层 .该PS DBR是采用设备简单、成本低廉且非常省时的电化学腐蚀法用单晶Si来制备的 ;该PS DBR的反射谱的高反射区 (阻止带 )宽 160nm且其反射率可达 99% .此硅基有机多层膜的反射谱图中出现了标志此结构为微腔的共振腔膜 .被测样品EL谱的半高宽可由无微腔的 70nm窄化为有微腔时的 12nm ,且为单峰发射 ,非共振模得到有效抑制 ;与非微腔器件相比 ,该微腔在谐振波长处EL的强度增强了 4倍 ;对微腔器件的电流 -亮度 -电压特性以及影响器件寿命的因素也进行了讨论 .制作有机微腔并提高其色纯性的方法可能是实现全硅基有机光子器件或光电子器件集成较有效的一种新途径
Reported electroluminescence (EL) of a silicon-based organic microcavity composed of an upper semitransparent metal film, a central active multilayer film and a porous silicon distributed Bragg mirror (PS DBR). The semitransparent metal film consists of Ag (20 nm), which serves as the upper electrode of the light emitting device and the upper reflector of the microcavity The active multi-layer film consists of Al (1 nm) LiF (0 5 nm) Alq3 Alq3: DCJTB NPB CuPc ITO SiO2, wherein Al LiF is The electron injection layer, ITO is the positive electrode, and SiO2 is the dielectric layer that electrically isolates the positive and negative electrodes. The PS DBR is prepared by single-crystal Si by electrochemical etching method with simple equipment, low cost and time-saving. The reflectivity spectrum of the PS DBR has a high reflectivity (block band) of 160 nm and a reflectivity of 99%. A resonant cavity film was identified in the reflection spectrum of this Si-based organic multilayers as a microcavity The half-height width of EL spectrum can be narrowed from 70nm without microcavities to 12nm with microcavities, which is single peak emission, and the non-resonant modes are effectively suppressed. Compared with non-microcavity devices, The intensity of the EL at the wavelength is enhanced by 4 times; the current-brightness-voltage characteristics of the microcavity device and the influence of the device lifetime The factors of life are also discussed.The method of making organic microcavities and improving their color purity may be a new way to realize the integration of all-silicon-based organic photonic devices or optoelectronic devices