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以各向异性腐蚀技术制造的矩形硅膜片为弹性敏感元件,研制了硅压阻式低压传感器。通过对矩形硅膜上应力分布的分析和计算,确定了力敏电阻的最佳位置和尺寸。压敏电阻全桥采用集成电路技术制作在2.5mm×5.5mm、厚35μm的矩形硅膜片上。在0～20kPa压力范围内,测得577μV/kPa·V的灵敏度,理论和实验结果有较好的一致性。
A rectangular silicon diaphragm made of anisotropic etching technology is a flexible sensor, developed a piezoresistive silicon pressure sensor. Through the analysis and calculation of the stress distribution on the rectangular silicon film, the optimal position and size of the force-sensitive resistor are determined. Varistor full-bridge using integrated circuit technology in the 2.5mm × 5.5mm, thickness 35μm rectangular silicon diaphragm. The sensitivity of 577μV / kPa · V was measured in the pressure range of 0 ~ 20kPa, and the theoretical and experimental results were in good agreement.