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研究了Ⅲ Ⅴ族半导体纳米晶表面氧化状态对它们表面活性的影响 ,并比较了具有不同阳离子的纳米晶体对氮分子吸附能力的差异 ,对这些现象进行了解释 ;用XPS、红外光谱等测试手段对样品进行了性质表征。结果表明 :当Ⅲ Ⅴ族半导体纳米晶表面氧化严重时 ,其表面活性明显降低 ;含Ga的Ⅲ Ⅴ族半导体纳米晶对氮分子的吸附作用明显强于含In的纳米晶。这是因为Ga能够与氮分子形成较强的配位键 ,对氮分子的吸附作用增强
The effects of surface oxidation state on the surface of Ⅲ Ⅴ semiconductor nanocrystals were investigated. The differences of adsorption capacity of nanocrystals with different cations on nitrogen molecules were also discussed. The phenomena were analyzed by XPS, infrared spectroscopy and other testing methods The samples were characterized. The results show that when the surface of Ⅲ Ⅴ semiconductor nanocrystals oxidize heavily, their surface activity decreases obviously. The adsorption of nitrogen molecules on Ⅴ Ⅴ semiconductor nanocrystals containing Ga is stronger than that of In. This is because Ga can form stronger coordination bonds with nitrogen molecules and enhance the adsorption of nitrogen molecules