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采用直流磁控溅射的方法制备掺铝氧化锌(AZO)透明导电薄膜,通过溅射过程中加入氢气的方法来降低AZO薄膜的电阻率。结果表明:通过加入氢气的方法能有效降低AZO薄膜的电阻率;在衬底温度为225℃的低温条件下,通过优化其它沉积参数,制备了电阻率最低为4.5×10~(-4)Ω·cm、可见光区平均透光率在90%的优质AZO薄膜。这说明在溅射过程中引入一定流量的氢气,H可以起到掺杂作用,提高AZO薄膜的电导率。
The AZO thin films were prepared by direct current magnetron sputtering and the resistivity of the AZO films was reduced by adding hydrogen during the sputtering process. The results show that the resistivity of AZO thin film can be effectively reduced by adding hydrogen gas. The lowest resistivity of 4.5 × 10 ~ (-4) Ω is obtained by optimizing the other deposition parameters under the low substrate temperature of 225 ℃. · Cm, the average visible light transmittance of 90% of the high-quality AZO film. This shows that during the sputtering process to introduce a certain flow of hydrogen, H can play a doping effect, improve the conductivity of AZO film.