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在Si基Si O2材料上设计并制作了中心波长为1.55μm、通道间隔为0.8nm的8×8阵列波导光栅(AWG)。详细介绍了器件的设计、制作和测试,并对测试结果及工艺误差进行了深入的分析讨论。封装后的测试结果显示,器件的3dB带宽为0.22nm;中央通道输入时,最小和最大插入损耗分别为4.01dB和6.32dB;边缘通道输入时,最小和最大插入损耗分别为6.24dB和9.02dB;对比不同通道输入时输出通道的中心波长,其偏移量低于0.039nm;器件的通道间串扰小于-25dB;偏振依赖损耗(PDL)小于0.3dB。
An 8 × 8 arrayed waveguide grating (AWG) with a center wavelength of 1.55 μm and a channel spacing of 0.8 nm was designed and fabricated on Si-based Si O2. The design, manufacture and test of the device are introduced in detail. The test results and process error are analyzed and discussed in depth. The packaged test results show that the device 3dB bandwidth of 0.22nm; central channel input, the minimum and maximum insertion loss were 4.01dB and 6.32dB; edge channel input, the minimum and maximum insertion loss were 6.24dB and 9.02dB ; The center wavelength of the output channel is compared with the input of different channels, the offset is less than 0.039 nm; the crosstalk between channels of the device is less than -25 dB; and the polarization dependent loss (PDL) is less than 0.3 dB.