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在不同应力条件下,研究了AlGaN/GaN高电子迁移率晶体管高温退火前后的电流崩塌、栅泄漏电流以及击穿电压的变化.结果表明,AlGaN/GaN高电子迁移率晶体管通过肖特基高温退火以后,器件的特性得到很大的改善.利用电镜扫描(SEM)和X射线光电子能谱(XPS)对高温退火前、后的肖特基接触界面进行深入分析,发现器件经过高温退火后,Ni和AlGaN层之间介质的去除,并且AlGaN材料表面附近的陷阱减少,使得肖特基有效势垒提高,从而提高器件的电学特性.
Under different stress conditions, the current collapse, gate leakage current and breakdown voltage before and after AlGaN / GaN HEMT annealed at high temperature were investigated. The results show that the AlGaN / GaN HEMT is annealed by Schottky After that, the characteristics of the device were greatly improved.Secondly, the Schottky contact interface of the device before and after high-temperature annealing was analyzed by SEM and XPS. It was found that after the device was annealed at high temperature, Ni And the AlGaN layer, and the reduction of traps in the vicinity of the surface of the AlGaN material increases the Schottky effective barrier, thereby improving the electrical characteristics of the device.