Fabrication of Perovskite-Type Photovoltaic Devices with Polysilane Hole Transport Layers

来源 :材料科学与应用期刊(英文) | 被引量 : 0次 | 上传用户：wyfwin

【摘要】

：

Perovskite-type photovoltaic devices with polysilane hole transport layers were fabricated by a spin-coating method. In the present work, poly(methyl phenylsila

【作者】

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Yasuhiro Shirahata Takeo Oku S

【机构】

：

DepartmentofMaterialsScience,FrontierMaterialsLaboratories

【出处】

：

材料科学与应用期刊(英文)

【发表日期】

：

2017年2期

【关键词】

：

POLYSILANE HOLE Transport LAYER PEROVSKITE PHOTOVOLTAIC Device Polysilane Hole T

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Perovskite-type photovoltaic devices with polysilane hole transport layers were fabricated by a spin-coating method. In the present work, poly(methyl phenylsilane) (PMPS) and decaphenylcyclopentasilane (DPPS) were used as the hole transport layers. First,

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Fabrication of Perovskite-Type Photovoltaic Devices with Polysilane Hole Transport Layers

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