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应用自建的超高真空原位装置及扫描俄歇微探针（SAM）技术，研究了AU－Ag／Si体系的表面电迁移现象。观测到清洁St表面上的Au／Ag／Si和Ag／Au／Si复层薄膜在直流电场作用下呈现明显的两相分离，Au，Ag分别向着外加电场的正极和负极方向快速迁移扩展，总的迁移速率对Au／Ag／Si约为0．63μm／s而对Ag／An／Si为0．37μm／s。实验结果表明，复合膜的结构，即其形成次序虽不影响An，Ag各自原有的电迁移方向，但影响其迁移扩散机制。并对上述现象及其相应的微观机制进行了初步分析。
The surface electromigration of AU-Ag / Si system was studied by using self-built ultra-high vacuum in-situ device and scanning Auger microprobe (SAM) technique. It was observed that the Au / Ag / Si and Ag / Au / Si films on the surface of clean St exhibited obvious two-phase separation under the action of DC electric field. The Au and Ag rapidly migrated toward the positive and negative electrodes of the applied electric field respectively. The migration rate was about 0.63 μm / s for Au / Ag / Si and 0.37 μm / s for Ag / An / Si. The experimental results show that the structure of the composite film, that is, its formation order does not affect the original electromigration direction of An and Ag, but affects the migration and diffusion mechanism. And the above phenomenon and its corresponding micro-mechanism were analyzed.