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用真空共蒸发法制备了CuxTe(1≤x≤2)薄膜,并通过X射线衍射(XRD)、X射线光电子能谱(XPS)及原子力显微镜(AFM)等表征手段分析了薄膜的结构特性,研究了热处理对不同Cu/Te配比的样品物相转变的影响。结果发现:刚沉积的薄膜非晶结构占主导地位,只有部分低Cu/Te比的薄膜出现多晶结构;退火后,薄膜发生晶相转变,且随着退火温度的升高,不同配比的样品有着不同程度的物相转变。其中,较低配比(x=11、.44)的样品多晶转变较为明显,结晶度较高,说明较小x值的薄膜晶化温度较低,而高x值的薄膜晶化温度较高。用CuxTe薄膜作为背接触层,获得了效率为12.5%的CdS/CdTe小面积太阳电池。
The CuxTe (1≤x≤2) thin films were prepared by vacuum co-evaporation method. The structural characteristics of the films were analyzed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) The effect of heat treatment on phase transformation of samples with different Cu / Te ratios was investigated. The results show that the amorphous structure of the as-deposited film predominates, and only part of the films with low Cu / Te ratio show polycrystalline structure. After annealing, the film undergoes a crystal phase transformation. With the increase of annealing temperature, Samples have different degrees of phase transition. Among them, the polycrystalline transitions of the samples with lower proportion (x = 11, .44) are more obvious and the crystallinity is higher, indicating that the crystallization temperature of the film with smaller x value is lower, while the crystallization temperature of the film with high x value high. Using CuxTe film as the back contact layer, a CdS / CdTe solar cell with an efficiency of 12.5% was obtained.