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目前已经有许多学者研究了用 UHV/CVD方法生长 Si1-x Gex 薄膜时 Ge在表面、次表面的偏聚。一种对这种实验结果的解释是由于化学原因 (例如氧化 )造成锗原子的化学势差 ,这种化学势差成为锗原子迁移产生锗偏聚的动力。本文通过应用一个简单的统计热力学模型 ,对在这种机理下产生的锗偏聚进行了研究。这种用 Monte Carlo方法建立的模型所得到的计算结果与实验结果相当吻合。
At present, many scholars have studied the segregation of Ge on the surface and the subsurface when growing the Si1-x Gex film by the UHV / CVD method. One explanation for this experimental result is the chemical potential difference of germanium atoms due to chemical causes (such as oxidation), which becomes a driving force for the germanium segregation of germanium atoms. In this paper, by using a simple statistical thermodynamic model, the segregation of germanium produced by this mechanism has been studied. The results obtained by this Monte Carlo-based model are in good agreement with the experimental results.