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相变存储器作为下一代具有竞争力的新型存储器,其基础和核心是相变存储介质。为了制备基于VO_2薄膜的非易失性相变存储器,首先采用等离子体增强化学气相沉积法在氟掺杂二氧化锡(FTO)导电玻璃衬底上沉积一层厚度为100 nm的TiO_2薄膜,再通过直流磁控溅射法制备VO_2薄膜,并在TiO_2/FTO复合薄膜上形成VO_2/TiO_2/FTO微结构,用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、四探针测试仪和半导体参数测试仪表征分析微结构的结晶和非易失性相变存储特性。结果表明,N_2和O_2的体积流量比为60∶40时,在TiO_2/FTO上可生长出晶向为<110>的高质量VO_2薄膜,在VO_2/TiO_2/FTO微结构两侧反复施加不同的脉冲电压,可观测到微结构具有非易失性相变存储特性,在67,68和69℃温度下的相变阈值电压分别为8.5,6.5和5.5 V,相比多层膜结构的相变阈值电压降低了约37%。
Phase change memory as the next generation of competitive new memory, the basis and core phase change storage media. In order to prepare nonvolatile phase change memory based on VO_2 thin films, a thin film of TiO_2 with a thickness of 100 nm was first deposited on a fluorine-doped tin oxide (FTO) conductive glass substrate by plasma enhanced chemical vapor deposition The VO_2 thin films were prepared by DC magnetron sputtering and the VO_2 / TiO_2 / FTO microstructures were formed on the TiO_2 / FTO composite films. The structures of the films were characterized by XRD, SEM, Semiconductor Parametric Tester Characterization Crystallization and Nonvolatile Phase Change Storage Characteristics of Microstructures. The results show that high quality VO_2 thin films with orientation of <110> can be grown on TiO_2 / FTO at 60:40 volume ratio of N_2 and O_2, and different VO_2 / TiO_2 / FTO microstructures are repeatedly applied Pulse voltage, the microstructures can be observed to have non-volatile phase change memory characteristics. The phase transition threshold voltages at 8.5, 6.5 and 5.5 V at 67, 68 and 69 ° C are respectively 8.5, 5.5 and 5.5 V. Compared with the phase transition of the multilayer structure The threshold voltage is reduced by about 37%.