利用一个一端镀有增透膜的Ｆ－Ｐ腔半导体激光器芯片和一段反射率为５０％的光纤光栅组合成一混合腔激光器，腔长约为２ｃｍ。在５０ｍＡ的偏置电流下，主边模抑制比为３７．６ｄＢ，出纤功率为１ｍＷ。并对这种结构的激光器进行了初步的理论分析 A cavity length of about 2 cm was achieved by using an F-P cavity semiconductor laser chip coated with an antireflection coating on one end and a 50% FBG laser. In the bias current of 50mA, the main mode rejection ratio of 37.6dB, the fiber output power of 1mW. And the laser of this kind of structure has carried on the preliminary theoretical analysis