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利用低压金属有机金属化合物汽相淀积方法 ,以液态 CCl4为掺杂源生长了高质量 C掺杂 Ga As/Al Ga As材料 ,并对生长机理、材料特性以及 C掺杂对大功率半导体激光器的影响进行了分析。在材料研究的基础上生长了以 C为 P型掺杂剂的 Ga As/ Al Ga As/ In Ga As应变量子阱半导体激光器结构 ,置备了高性能 980 nm大功率半导体激光器。
High-quality C-doped GaAs / AlGaAs materials were grown by low-pressure metal-organic-metal vapor deposition with liquid CCl4 as dopant. The growth mechanism, material properties and C-doping on high power semiconductor lasers The impact of the analysis. Based on the material research, GaAs / AlGaAs / InGaAs strained quantum well semiconductor laser structure with C as P-type dopant was grown and equipped with high performance 980nm high power semiconductor laser.