论文部分内容阅读
采用金属Ga升华法在石墨烯/蓝宝石衬底上生长了高质量GaN纳米线,研究了不同的生长条件,如NH_3流量、反应时间、催化剂和缓冲层等对GaN纳米线形貌的影响,采用扫描电子显微镜(SEM)对GaN纳米线进行表征。研究发现,在适当的NH_3流量且无催化剂时,衬底上可以生长出粗细均匀的GaN纳米线。反应时间为5 min时,纳米线密集分布在衬底上,表面光滑。在石墨烯/蓝宝石上预先低温生长GaN缓冲层,然后升温至1 100℃进行GaN纳米线生长,获得了具有择优取向的GaN纳米线结构。研究表明,石墨烯和缓冲层对获得GaN纳米线结构有序阵列具有重要的作用。
High-quality GaN nanowires were grown on graphene / sapphire substrate by metal Ga sublimation method. The effects of different growth conditions such as NH 3 flow rate, reaction time, catalyst and buffer layer on the morphology of GaN nanowires were studied. The GaN nanowires were characterized by scanning electron microscopy (SEM). It was found that GaN nanowires with uniform thickness can be grown on the substrate with appropriate NH 3 flux without catalyst. When the reaction time is 5 min, the nanowires are densely distributed on the substrate and the surface is smooth. The GaN buffer layer was pre-grown on graphene / sapphire substrate at low temperature, and then heated to 1100 ℃ for GaN nanowire growth. The GaN nanowire structure with preferred orientation was obtained. The results show that graphene and buffer layer play an important role in obtaining an ordered array of GaN nanowires.