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依据导电介质的稳态电场理论建立了一种对增益导波型垂直腔半导体激光器注入电流矢量分析的三维解析模型.计算研究了电流密度空间分布及其与顶面电注入环参量之间的相互关联性.结果显示在两极之间存在一个载流子径向分布中心极大的区域.由于激光功率与注入电流之间存在线性关系,因此,要使器件能够获得基模或中心均匀的光强输出以及尽可能低的阈值,应使激光有源层与载流子均匀分布的临界层重合.计算结果对顶发射与底发射结构以及不同环参数下的载流子分布情况及对近场模式形成的影响进行了分析和讨论.
Based on the steady state electric field theory of the conducting medium, a three-dimensional analytical model for the current vector analysis of the gain-guided-mode vertical-cavity semiconductor laser was established. The spatial distribution of the current density and its interaction with the top electro- The results show that there is a region where the center of the radial distribution of the carriers is very large between the two poles.Because of the linear relationship between the laser power and the injection current, it is necessary to make the device obtain the uniform intensity of the fundamental mode or center Output and the threshold as low as possible, the laser active layer should be overlapped with the uniform distribution of the carrier.The results of the calculation of the carrier distribution under the top emission and bottom emission structure and the different ring parameters, and the near-field mode The impact of formation was analyzed and discussed.