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为了研究涡流二极管内空化现象的机理特性及对其性能的影响,我们假设流体为气液混相均质,并考虑不可凝结气相,采用基于组分输运方程,求解了涡流二极管全流道内气液混相均质流的雷诺平均N-S方程以及气相组分输运方程。数值计算结果显示了空化形成时涡流二极管入口、出口及旋流腔内的流场形态,研究表明:涡流二极管空化现象主要发生在流体切向进入时旋流腔和中心管的中心部位;空化流是由于液体在中心旋流场低压条件下汽化,同时不可凝结气体由于亨利定律在旋转流场形成的压力梯度下而发生的输运效应综合形成的;空化流由于强旋涡的原因对涡流二极管的性能产生明显的影响。上述结论对涡流二极管的设计及其指导工程应用具有重要的价值。
In order to study the mechanistic characteristics of cavitation in vortex diode and the influence on its performance, we assume that the fluid is gas-liquid homogeneous and homogeneous and consider the non-condensable gas phase. Based on the component transport equation, Reynolds-averaged Navier-Stratospheric Equilibrium Navier-Stokes equations and gas-phase component transport equations for a fluid-liquid homogeneous flow. The numerical results show the flow field in the inlet and outlet of the vortex diode and the vortex flow field in the formation of cavitation. The results show that the cavitation of the vortex diode mainly occurs in the center of the vortex chamber and the center tube when the fluid enters tangentially. The cavitation flow is due to the vaporization of the liquid at a low pressure in the central swirl field, while the uncondensable gas is formed by the transport effect due to Henry’s Law under the pressure gradient created by the swirling flow field. The cavitation flow due to strong vortices Vortex diode performance have a significant impact. The above conclusion is of great value to the design of vortex diode and its application in engineering guidance.