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对脉冲激光二极管(LD)端面抽运变热导率方片Yb:YAG晶体的温度场进行了分析和研究,建立了端面绝热、周边恒温的热传导模型,采用半解析理论,结合牛顿法得到了晶体的温度场分布,分析了不同的抽运功率、超高斯阶次、光斑半径和晶体尺寸因素对晶体温度场的影响。计算结果表明,当采用抽运功率为80 W、超高斯半径为400μm、超高斯阶次为3的脉冲激光二极管对晶体进行抽运时,在将Yb:YAG晶体的热导率分别视为常量和非常量的情况下,该晶体在抽运端面处获得的最大温升分别为31.69,35.66℃。研究结果为激光器的设计提供了一定的理论指导。
The temperature field of the square chip Yb: YAG with variable thermal conductivity of the end face of the pulsed laser diode (LD) was analyzed and studied. The thermal conductivity model of end-face adiabatic and surrounding thermostat was established. By using the semi-analytical theory and Newton’s method, The temperature field distribution of the crystal was analyzed. The influence of different pump power, super-Gaussian order, spot radius and crystal size on the temperature field was analyzed. The calculated results show that when using a pulsed laser diode with a pumping power of 80 W, a super-Gaussian radius of 400 μm and a super-Gaussian order of 3 to pump the crystal, the thermal conductivities of Yb: YAG crystals are regarded as constants And non-constant case, the maximum temperature rise of the crystal at the pumping end face was 31.69 and 35.66 ℃, respectively. The results provide some theoretical guidance for the design of lasers.