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本文用Ｘ射线双晶摇摆曲线，分析了Ｈｇ１－ｘＣｄｘＴｅ外延薄膜的晶体质量。结果表明，用垂直浸渍液相外延方法生长的Ｈｇ１－ｘＣｄｘＴｅ薄膜，结构均匀性好，晶体质量高；Ｈｇ１－ｘＣｄｘＴｅ外延薄膜表面层的晶体质量，优于其界面层；同时，Ｈｇ１－ｘＣｄｘＴｅ外延薄膜表面层的位错密度，可通过Ｘ射线双晶摇摆曲线的半峰宽估算得到。
In this paper, X-ray bimodal rocking curve was used to analyze the crystal quality of Hg1-xCdxTe epitaxial films. The results show that the Hg1-xCdxTe films grown by the vertical immersion liquid phase epitaxy have good structural uniformity and high crystal quality. The crystal quality of the Hg1-xCdxTe epitaxial films is better than that of the interfacial layers. Meanwhile, the Hg1-xCdxTe epitaxial films The dislocation density of the surface layer can be estimated from the half-width of the X-ray bimodal rocking curve.