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合金层与InAs/InP量子点激光器的接触电阻对激光器的性能有很大影响,而接触电阻的大小与合金材料、退火温度和退火时间有关。本文采用Au/Ni/Au/Ge做InAs/InP量子点激光器的欧姆接触合金层,通过改变退火温度和退火时间调节量子点激光器中接触电阻的阻值。实验发现,退火时间对接触电阻的改变不大,但是提高退火温度却能极大地降低接触电阻的阻值。实验获得了Au/Ni/Au/Ge合金层与InAs/InP量子点激光器最佳欧姆接触条件,通过矩阵传输法测得相应接触电阻率为1.34×10-6Ω·cm2。在此条件下,制备激射中心波长为1.577μm的多模量子点激光器,室温下单面最大输出功率达到和超过39mW。
The contact resistance between the alloy layer and the InAs / InP quantum dot laser has a great influence on the performance of the laser, and the contact resistance depends on the alloy material, the annealing temperature and the annealing time. In this paper, the ohmic contact alloy layer of InAs / InP quantum dot laser is made by Au / Ni / Au / Ge. The resistance of the quantum dot laser is adjusted by changing the annealing temperature and annealing time. The experiment found that the annealing time has little effect on the contact resistance, but increasing the annealing temperature can greatly reduce the resistance of the contact resistance. The best ohmic contact conditions of Au / Ni / Au / Ge alloy layer and InAs / InP quantum dot laser were obtained experimentally, and the corresponding contact resistivity was 1.34 × 10-6Ω · cm2 measured by matrix transmission method. Under these conditions, a multi-mode QD laser with 1.577 μm lasing center wavelength was prepared, and the maximum single-side output power reached and exceeded 39 mW at room temperature.