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制备了增强型InGaP/InGaAsPHEMT器件结构、阈值控制以及单电源低电压低噪声单片放大器。获得了阈值电压接近0V的增强型InGaP/InGaAsPHEMT器件，并在此基础上设计制作了可在1.5～3V低电压和单电源下工作的2.5GHz低噪声单片放大器。同时对该电路性能的进一步提高进行了模拟分析。
An enhanced InGaP / InGaAsPHEMT device structure, threshold control and single-supply low-voltage low-noise monolithic amplifier were fabricated. An enhanced InGaP / InGaAsPHEMT device with a threshold voltage close to 0V was obtained. Based on this, a 2.5GHz low noise monolithic amplifier operating at 1.5 ~ 3V low voltage and single power supply was designed. At the same time, the performance of the circuit to further improve the simulation analysis.