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首次报道了辐照所引起的 SOI/ MOS器件 PD (部分耗尽 )与 FD (全耗尽 )过渡区的漂移 .基于含总剂量辐照效应的 SOI MOSFET统一模型 ,模拟了 FD与 PD过渡区随辐照剂量的漂移 .讨论了辐照引起 FD与 PD器件转化的原因 ,进一步分析了 FD与 PD器件的辐照效应
For the first time, the drift of PD (partially depleted) and FD (fully depleted) transition region of SOI / MOS devices caused by irradiation was reported. Based on the uniform model of SOI MOSFET with total dose irradiation effect, With the radiation dose drift.This paper discusses the reasons for the FD and PD devices induced by irradiation and further analyzes the radiation effects of FD and PD devices