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我们采用高压液封原位合成直拉法(简称 HPDSLEC 法),在热解氮化硼坩埚或石英坩埚里生长不掺杂〈100〉砷化镓单晶。单晶直径φ30～50毫米,重量750克,成晶率80%。我们对不同熔体组分(指熔体中砷原子分数)生长的单晶用火花源质谱法,局域振动模远红外光吸收法,热激电流谱法,
We use high-pressure liquid seal in-situ synthesis Czochrals Laura method (referred to as HPDSLEC method), growing in a pyrolytic boron nitride crucible or quartz crucible undoped <100> GaAs single crystal. Single crystal diameter φ30 ~ 50 mm, weight 750 g, crystallization rate of 80%. Our single crystals grown on different melt components (arsenic fraction in the melt) were analyzed by spark source mass spectrometry, localized vibration mode far-infrared absorption spectroscopy, heat shock current spectroscopy,