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用MonteCarlo方法模拟和分析了电子束光刻中限制其分辨率的主要因素———邻近效应的影响.分析了入射电子束的形状、入射电子的能量、衬底材料和厚度对邻近效应大小的影响,并与实验结果进行了比较,发现模拟结果与实验结果符合得很好.分析表明高斯分布的电子束比理想电子束的邻近效应大;衬底原子序数越大,衬底越厚,入射电子束能量越低,邻近效应越大.
Monte Carlo method is used to simulate and analyze the main factor limiting the resolution in electron beam lithography, such as the influence of the proximity effect, the shape of the incident electron beam, the energy of the incident electron, the influence of the material and thickness of the substrate on the size of the proximity effect The results show that the simulation results are in good agreement with the experimental results. The analysis shows that the Gaussian distribution of the electron beam is larger than that of the ideal electron beam. The larger the atomic number of the substrate, the thicker the substrate, The lower the electron beam energy, the greater the proximity effect.