论文部分内容阅读
根据我们以前的理论,本文提出了一些常用晶体的各种可能的单指无内反射叉指换能器结构,并分析了影响它们性能的几种因素。其中YZ—LiNbO_3,ST—X石英及X,112°YLiTaO_3上的金或金加铬单指结构存在某些缺点,用途受到较大限制,仅适用于带宽较宽及对中心频率准确度要求不太严格的场合。而上述三种基片上的沟槽填铝结构及Y128°LiNbO_3的铝和铝加铬单指结构是比较好的结构,具有比较广泛的用途。最后给出了我们在ST—X石英上用沟槽填铝单指结构研制的一种高带外抑制窄带滤波器的实验结果。
According to our previous theory, we propose various possible structures for single-finger-an-IFD fingers of some commonly used crystals and analyze several factors that affect their performances. Among them, YZ-LiNbO_3, ST-X quartz and X, 112 ° YLiTaO_3 gold or gold chrome single-finger structure has some shortcomings, the use is subject to greater restrictions apply only to a wide bandwidth and center frequency accuracy requirements Too strict occasions. The above-mentioned three kinds of substrates on the groove filled aluminum structure and Y128 ° LiNbO_3 of aluminum and aluminum chrome single-finger structure is a better structure, has a more extensive use. Finally, we present the experimental results of a high-band external suppression narrow-band filter which is developed on the ST-X quartz by one-finger trench aluminum filling structure.