一、硅器件辐照简介加速器产生的电子束、钴—60辐射装置的γ射线和核反应堆的中子或γ射线,都可以用来辐照硅器件,改善电子特性。国外在70年代就已做了。国内80年代起开始研究,已取得一定的成绩。辐照的主要效应是射线使硅晶体产生缺陷也叫空位。这种空位能很快复合硅半导体中的少数载流子(以下简称少子),减少了少子在半导体中的扩散长度 I. INTRODUCTION TO SILICON DEVICE Irradiation Electron beams generated by accelerators, γ-rays from cobalt-60 radiation and neutron or γ-rays from nuclear reactors can be used to irradiate silicon devices to improve electronic properties. Abroad in the 70’s have already done. Since the 1980s, research has been started and some achievements have been made. The main effect of irradiation is the ray of silicon crystal defects also known as vacancies. This vacancy can quickly compound silicon semiconductor minority carriers (hereinafter referred to as fewer children), reducing the minority son in the semiconductor diffusion length