通过建立一种超突变结变容二极管的杂质浓度分布模型,并基于求解一维泊松方程、雪崩击穿条件方程和电阻计算公式,推导了该模型的C-V特性、VBR、RS和Q值,设计了用于分析该模型的模拟软件,阐述了模拟软件的运行流程。基于该模型和模拟软件,采用外延-扩散的方法研制了一种硅超突变结变容二极管,采用C-V法测量了外延材料的杂质浓度分布,结果表明材料的浓度分布与模拟结果相符。研制的变容二极管的主要参数:击穿电压VBR为50~55 V;电容变化比(C-4V/C-8V)为2.42~2.44;VR=-4 V,f=50 MHz时的品质因素Q为150~180,实测参数与模拟结果吻合得很好。设计模型和模拟软件得到了验证。 The CV characteristics, VBR, RS and Q values ​​of the model were derived by setting up an impurity concentration distribution model of a super-mutant junction varactor and based on solving one-dimensional Poisson equation, avalanche breakdown condition equation and resistance calculation formula, The simulation software which is used to analyze the model is designed and the operation flow of the simulation software is expounded. Based on the model and the simulation software, an epitaxial-diffused silicon super-abrupt junction varactor was developed. The C-V method was used to measure the impurity concentration distribution of the epitaxial material. The results show that the concentration distribution of the material is consistent with the simulation results. The main parameters of the varactor diode developed are: breakdown voltage VBR of 50-55 V; capacitance change ratio (C-4V / C-8V) of 2.42-2.44; VR = -4 V at f = 50 MHz Q is 150 ~ 180, the measured parameters are in good agreement with the simulation results. Design models and simulation software have been validated.