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研究了利用电化学原子层外延法(electrochemical atomic layer epitaxy,ECALE)在Pt电极上生长Sb2Te3化合物半导体薄膜热电材料的过程.采用循环伏安扫描分别研究了Te和Sb在Pt衬底上以及在覆盖了一层元素之上的电沉积特性,在此基础上使用自动沉积系统交替电化学沉积了400个Te和Sb原子层.采用XRD,FESEM和FTIR等多种分析测试手段对沉积薄膜的结构、形貌、禁带宽等进行了表征.XRD结果表明,沉积物是Sb2Te3化合物,与EDX定量分析和电量计算结果吻合;FESEM对薄膜表面及断面形貌检测表明沉积颗粒排列紧密、大小均匀,平均粒径约为20nm,薄膜均匀平坦,膜厚约190nm;由于沉积薄膜的纳米结构,FTIR吸收谱出现蓝移,测得Sb2Te3薄膜禁带宽为0.42eV.
The process of growing Sb2Te3 compound semiconductor thin film thermoelectric material on Pt electrode by using electrochemical atomic layer epitaxy (ECALE) has been studied. Cyclic Voltammetry scanning has been used to investigate the effect of Te and Sb on Pt substrate, A layer of elements on the electrodeposition characteristics, on the basis of the use of automatic deposition system alternately electrochemical deposition of 400 Te and Sb atomic layer using XRD, FESEM and FTIR and other analytical tools for the deposition of thin film structure, Morphology, bandgap, etc. XRD results show that the sediment is Sb2Te3 compound, which is in good agreement with the quantitative analysis of EDX and the calculation results of electric energy. FESEM shows that the deposited particles are arranged closely and evenly, the average particle size Diameter of about 20nm, the film is even and flat, the film thickness is about 190nm; due to the deposited nanostructures, FTIR absorption spectrum appears blue shift, measured Sb2Te3 film forbidden bandwidth of 0.42eV.