Effects of ZnO Buffer Layer Thickness on Properties of Mgx Zn1-xO Thin Films Deposited by MOCVD

来源 :高等学校化学研究：英文版 | 被引量 : 0次 | 上传用户：zyff1985

【摘要】

：

High-quality MgxZn1-xO thin films were grown on sapphire(0001) substrates with a ZnO buffer layer of different thicknesses by means of metal-organic chemical va

【作者】

：

DONG Xin LIU Da-li DU Guo-tong

【机构】

：

StateKeyLaboratoryonIntegratedOptoelectronics

【出处】

：

高等学校化学研究：英文版

【发表日期】

：

2005年5期

【关键词】

：

ZNO 薄膜缓冲器兰宝石水汽 MgxZn1-xO ZnO Buffer layer Sapphire substrate MOCVD AFM

【基金项目】

：

国家高技术研究发展计划(863计划)

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High-quality MgxZn1-xO thin films were grown on sapphire(0001) substrates with a ZnO buffer layer of different thicknesses by means of metal-organic chemical vapor deposition. Diethyl zinc, bis-cyclopentadienyl-Mg and oxygen were used as the precursor mat

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Effects of ZnO Buffer Layer Thickness on Properties of Mgx Zn1-xO Thin Films Deposited by MOCVD

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