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利用磁控溅射方法沉积双势垒磁性隧道结多层膜,其中Al_O势垒层由等离子体氧化1nm厚的金属铝膜方式制备,然后采用深紫外光曝光和Ar离子刻蚀技术、微加工制备出长短轴分别为6和3μm大小的椭圆形双势垒磁性隧道结(DBMTJ),并在室温和低温下对其自旋电子输运特性进行了研究.DBMTJ的隧穿磁电阻(TMR)比值在室温和4.2K分别达到27%和42.3%,结电阻分别为13.6kΩ·μm2和17.5kΩ·μm2,并在实验中观察到平行状态下存在低电阻态及共振隧穿效应,反平行态下呈现高电阻态以及TMR随外加偏压或直流电流的增加而发生振荡现象.由此,设计了一种基于这种双势垒磁性隧道结隧穿特性的自旋晶体管.
A dual-barrier magnetic tunnel junction multilayer film was deposited by magnetron sputtering. The Al_O barrier layer was prepared by plasma oxidation of a 1-nm-thick aluminum metal film, and then was subjected to deep ultraviolet light exposure and Ar ion etching. (DBMTJ) with the major axis and the minor axis of 6 and 3μm respectively were prepared and their spintronic transport properties were investigated at room temperature and low temperature.The tunneling magneto-resistance (TMR) The ratio reached 27% and 42.3% respectively at room temperature and 4.2K, and the junction resistances were 13.6kΩ · μm2 and 17.5kΩ · μm2 respectively. In the experiment, the low resistance state and the resonant tunneling effect were observed in the parallel state and the antiparallel state And the TMR oscillates with the increase of bias voltage or DC current.Therefore, a spin-on transistor based on the tunneling characteristics of the double-barrier magnetic tunnel junction is designed.