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提出了一种用于全MOS电压基准源的新颖预抑制电路。采用一个大宽长比PMOS管和负反馈环路,将预抑制电压与基准电压之差固定为一个阈值电压。获得的预抑制电压用来为全MOS电压基准源供电,极大地改善了基准电压的电源调整率、温度稳定性和电源电压抑制比。采用Nuvoton 0.35μm 5V标准CMOS工艺进行仿真,整个电路的版图尺寸为64μm×136μm。结果表明:电压基准源的输出基准电压为1.53V;电源电压在3.4~5.5V范围内,线性调整率为97.8μV/V;PSRR在10 Hz处为-143.2dB,在100 Hz处为-123.3dB,在1kHz处为103.3dB;环境温度在-45℃~125℃范围内,平均温度系数为8.7×10~(-6)/℃。
A novel pre-suppression circuit for a full MOS voltage reference is proposed. A wide aspect ratio PMOS transistor and negative feedback loop are used to fix the difference between the pre-suppressed voltage and the reference voltage to a threshold voltage. The pre-suppression voltage obtained is used to power the full MOS voltage reference, greatly improving the power regulation, temperature stability, and supply voltage rejection of the reference. Using Nuvoton 0.35μm 5V standard CMOS process simulation, the layout of the entire circuit size of 64μm × 136μm. The results show that the voltage reference output voltage is 1.53V, the supply voltage is in the range of 3.4-5.5V, the linear regulation rate is 97.8μV / V, PSRR is -143.2dB at 10 Hz and -123.3 at 100 Hz dB, which is 103.3dB at 1kHz; the ambient temperature is in the range of -45 ℃ ~ 125 ℃, and the average temperature coefficient is 8.7 × 10 -6 / ℃.