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研究了用氢化非晶硅薄膜红外透射谱的摇摆模和伸缩模计算氢含量的两种方法, 分析了这两种方法在计算薄膜氢含量时引起差别的原因. 理论推导及实验结果表明, 若将SiH2和(SiH2)n含量大小用结构因子F=(I840+I880)/I2000来表示, 则在F值较小的情况下, 薄膜折射率接近3.4或拟合厚度值d=0.71~0.89 mm时, 两种计算方法得到的氢含量很接近. 研究还发现, 制备工艺对薄膜的键结构及组分有很大的影响, 不同的制备方法薄膜中形成的SiH2和(SiH2)n含量不同, F值大的样品均匀性差(表现为这些样品实测厚度值与拟合厚度值有较大的差异); 同时在这种情况下, 两种方法计算得到它们的氢含量值相差较大, 但CAT CVD辅助MWECR CVD制备方法, 能有效地抑制SiH2和(SiH2)n的形成.
Two methods for calculating the hydrogen content by using the rocking mode and telescopic mode of infrared transmission spectrum of hydrogenated amorphous silicon thin film were studied and the causes of the difference between these two methods in calculating the hydrogen content of the thin film were analyzed.Theoretical deduction and experimental results show that if When the content of SiH2 and (SiH2) n is represented by the structural factor F = (I840 + I880) / I2000, the refractive index of the film approaches 3.4 or the fitted thickness d = 0.71-0.89 mm , The hydrogen content obtained by the two methods is very close.The study also found that the preparation process has a great influence on the bond structure and composition of the films.The content of SiH2 and (SiH2) n formed by the different preparation methods is different, The samples with large F value have poor uniformity (the actual thickness values of these samples are different from the fitted thickness values). In this case, the calculated values of hydrogen content differ greatly between the two methods. However, CAT CVD assisted MWECR CVD preparation, can effectively inhibit the formation of SiH2 and (SiH2) n.