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针对大功率半导体开关反向开关晶体管(RSD)由于预充不足造成的非均匀开通缺陷,在直接预充放电工作电路的基础上,设计了一种两步式放电工作电路.根据RSD结构特点理论分析了正常开通所需条件,并对器件元胞结构进行建模分析,模型仿真结果表明RSD在窄脉宽预充电流作用下具有更佳的开通性能,降低了预充阶段基区载流子复合.两步式放电实验发现第一步放电电流幅值、脉宽对于两步式放电电路的正常工作起决定作用,而反向预充电流主要作用于RSD第一步放电的正常开通,降低了预充电路设计难度.仿真及实验结果均表明两步式放电电路较直接式预充放电电路提高了RSD的均匀开通性能,这是由于两步式放电显著提高了基区等离子体积累.
Aiming at the non-uniform opening defect of reverse switching transistor (RSD) in high-power semiconductor switch, a two-step discharge working circuit is designed on the basis of the direct pre-charge and discharge working circuit.According to the characteristics of RSD structure The conditions required for normal turn-on are analyzed, and the cellular structure of the device is modeled and analyzed. The simulation results show that RSD has better turn-on performance under the action of narrow pulse width precharge current, The two-step discharge test found that the first step discharge current amplitude and pulse width for the normal operation of the two-step discharge circuit plays a decisive role, while the reverse pre-charge current mainly acts on the first step of RSD discharge normal opening, lower The design difficulty of the pre-charge circuit is demonstrated.The simulation and experimental results show that the two-step discharge circuit improves the uniform turn-on performance of the RSD compared to the direct pre-charge and discharge circuit because the two-step discharge significantly increases the plasma accumulation in the base region.