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A novel wavelength tunable semiconductor laser based on DFB (Distributed Feedback) structure with two non|uniform sections and co|cavity is reported in this paper.The laser structure was grown by three|step MOCVD and subsequently processed into the PBH|LD (Planar Buried Heterostructure|Laser Diode) devices.The device was tuned in two ways.A discontinuous wavelength tuning range of 11 1nm and a continuous wavelength tuning range of 2 6nm was achieved in different tuning ways.Only one control current was used to have the wavelength tuned in both ways.
A novel wavelength tunable semiconductor laser based on DFB (Distributed Feedback) structure with two non | uniform sections and co | cavity is reported in this paper.The laser structure was grown by three | step MOCVD and subsequently processed into the PBH | LD (Planar Buried Heterostructure | Laser Diode) devices. The device was tuned in two ways. A discontinuous wavelength tuning range of 11 nm and a continuous wavelength tuning range of 2 6 nm was achieved in different tuning ways. Only one control current was used to have the wavelength tuned in both ways.