效率更高、功率密度更大、尺寸更小且系统成本更低:这是基于碳化硅(Si C)的晶体管的主要优势。近日,英飞凌科技股份公司开始批量生产EASY 1B——英飞凌在2016年PCIM上推出的首款全碳化硅模块。在纽伦堡2017年PCIM展会上,英飞凌展出了1200 V Cool Si C?MOSFET产品系列的其他模块平台和拓扑。如今,英飞凌能够更好地发挥碳化硅技术的潜力。英飞凌工业功率控制事业部总裁Peter Wawer博士指出:“碳化硅已达到 More efficient, larger power density, smaller size and lower system cost: This is a key benefit of Silicon Carbide (Si C) based transistors. Infineon Technologies AG has started volume production of EASY 1B, the first all-silicon carbide module introduced by Infineon at the 2016 PCIM. Infineon Technologies will showcase the other module platforms and topologies of the 1200 V Cool Si C® MOSFET product line at PCIM 2017 in Nuremberg. Infineon is now better positioned to harness the potential of silicon carbide technology. Dr. Peter Wawer, president of Infineon’s Industrial Power Control Division, states: ”Silicon carbide has reached