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使用射频磁控溅射和化学溶液法制备了SiO2/聚酰亚胺(PI)/SiO2绝缘膜。分别使用X射线衍射、扫描电镜对薄膜结构和薄膜表面形貌进行了表征;利用超高阻微电流测试仪测试了SiO2/PI/SiO2复合绝缘膜漏电流和电压击穿特性;采用SiO2/PI/SiO2作为绝缘膜,制作了后栅型场致发射器件,使用场发射测试系统测试了器件的开启电压、发射电流以及发光亮度。结果表明:SiO2/PI/SiO2复合绝缘膜具有高的击穿电压和低的漏电流密度,后栅器件中栅极对阴极表面的电场强度调控作用明显,阳极电压为750V时,栅极开启电压为91 V,阳极电流可达384μA,栅极漏电流仅为59μA,器件最高亮度可达600 cd/m2。
SiO2 / polyimide (PI) / SiO2 insulating films were prepared by RF magnetron sputtering and chemical solution method. The structure and surface morphology of the films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The leakage current and voltage breakdown characteristics of SiO2 / PI / SiO2 composite insulating films were tested by ultrahigh resistance micro- / SiO2 as the insulating film, a back gate type field emission device was fabricated. The field emission test system was used to test the turn-on voltage, emission current and luminance of the device. The results show that SiO2 / PI / SiO2 composite insulating film has high breakdown voltage and low leakage current density. Gate-to-gate device has a great effect on controlling the electric field strength of the cathode surface. When the anode voltage is 750V, the gate-on voltage 91 V, an anodic current of 384 μA, a gate leakage of only 59 μA, and a maximum device brightness of 600 cd / m2.