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为从理论上得出半导体桥电阻的计算方法,首先在电阻率一定的条件下,基于电阻的基本表达式,用积分的方法得出电阻关于几何尺寸和形状的计算公式。然后基于半导体物理理论,对电阻率和掺杂浓度以及温度之间的关系进行了分析,建立了对于一定掺杂浓度的半导体桥电阻率随温度变化的模型,并得出电阻率随温度变化的简化计算方法。此研究对于半导体桥换能元电阻的设计具有理论和实际意义。
In order to obtain the calculation method of the semiconductor bridge resistance theoretically, firstly, the formula of the resistance about the geometrical size and shape is obtained by the integral method based on the basic expression of resistance under certain resistivity. Then based on the semiconductor physics theory, the relationship between resistivity, doping concentration and temperature is analyzed, and the model of the resistivity of the semiconductor bridge with temperature for a certain doping concentration is established. The dependence of the resistivity with the temperature Simplify the calculation method. This research has theoretical and practical significance for the design of semiconductor bridge transducer element resistance.