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目前,在微波频段,为实现几十瓦以上的大功率场效应晶体管(FET)放大器,必须用功率合成器。该论文中使用了输入输出电路为同轴线的圆柱形TMomo模(m=2,3……)空腔谐振器,提出了一种比过去结构简单、频带宽、插损低的合成器方案,并由等效电路说明了模数m和合成数对带宽的影响。空腔谐振器的寄生模会使采用合成器的FET放大器可靠性降低,因此提出了一种在TMomo模空腔谐振器里附加抑制寄生模的缝隙和副谐振器的结构。为了验证这种结构的有效性,进行了激励寄生模,测定其反射特性的实验。在12GHz,m=2及4时,本方案设计的4路、8路合成器的插入损耗分别为0.25dB和0.45dB,并实现了用该合成器最大输出为40W的FET放大器。
Currently, in the microwave frequency band, power synthesizers must be used to achieve high-power field effect transistor (FET) amplifiers of several tens of watts or more. In this paper, a cylindrical TMomo-mode (m = 2, 3, ...) cavity resonator with coaxial input and output circuits is used, and a synthesizer scheme with simpler structure, narrower bandwidth and lower insertion loss , And the equivalent circuit shows the modulus m and the number of synthesis on the bandwidth. The parasitic modes of the cavity resonator reduce the reliability of the FET amplifier using the synthesizer. Therefore, a structure to suppress the parasitic modes of the slot and the sub-resonator in the TMomo mode cavity resonator is proposed. In order to verify the effectiveness of this structure, an experiment was conducted to stimulate parasitic modes and measure their reflection characteristics. At 12GHz, m = 2 and 4, the proposed design 4-way, 8-way synthesizer insertion loss were 0.25dB and 0.45dB, and the use of the maximum output of the synthesizer FET amplifier 40W.