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采用两步法,即先用磁控溅射在Si(100)表面生长一层ZnO籽晶层、再利用液相法制备空间取向高度一致的ZnO纳米棒阵列.用扫描电子显微镜、X射线衍射、高分辨透射电子显微镜和选区电子衍射对样品形貌和结构特征进行了表征.结果表明,ZnO纳米棒具有垂直于衬底沿c轴择优生长和空间取向高度一致的特性和比较大的长径比,X射线衍射的(XRD)(0002)峰半高宽只有0.06°,选区电子衍射也显示了优异的单晶特性.光致发光谱表明ZnO纳米棒具有非常强的紫外本征发光和非常弱的杂质或缺陷发光特性.
A two-step method was used, in which a ZnO seed layer was grown on the Si (100) surface by magnetron sputtering and then a ZnO nanorod array with high spatial orientation was prepared by liquid-phase method.Using scanning electron microscopy and X-ray diffraction , High resolution transmission electron microscopy (TEM) and selected area electron diffraction (EDS) were used to characterize the morphology and structure of the samples. The results show that the ZnO nanorods have the characteristics of perpendicular to the substrate along the c-axis and highly consistent spatial orientation and relatively large diameter (XRD) (0002) has a full width at half maximum (FWHM) of only 0.06 °, and the selected area electron diffraction also shows excellent single crystal properties.The photoluminescence spectra indicate that the ZnO nanorods have a very strong UV intrinsic luminescence Weak impurity or defect light emitting characteristics.