Amplified spontaneous emission from metal-backed poly[2-methoxy-5-( 2’-ethylhexyloxy)-1, 4-phenylene

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We investigate the amplified spontaneous emission (ASE) from an Ag-backed poly[2-methoxy-5-(2’-ethylhexyloxy)1,4-phenylenevinylene] (MEH-PPV) film with different film thicknesses.The ASE characteristics of Ag-backed MEHPPV films with different thicknesses show that increasing the film thickness can reduce the influence of the Ag cladding.The threshold,the gain,and the loss of the device with a thickness of 170 nm are comparable to those of a metal-free device.The lasing threshold of this device is about 7.5...,We investigate the amplified spontaneous emission (ASE) from an Ag-backed poly[2-methoxy-5-(2’-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) film with different film thicknesses.The ASE characteristics of Ag-backed MEH-PPV films with different thicknesses show that increasing the film thickness can reduce the influence of the Ag cladding.The threshold,the gain,and the loss of the device with a thickness of 170 nm are comparable to those of a metal-free device.The lasing threshold of this device is about 7.5 times that of a metal-free device.Our findings demonstrate that Ag-backed MEH-PPV film with an appropriate thickness can still be a good polymer gain material for the fabrication of solid-state lasers.
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