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肖特基势垒栅宽度为8毫米的网状源砷化镓微波功率场效应晶体管已经研制成功。在源漏电压为8伏和2千兆赫下,器件的输出功率为1.6瓦,功率增益为5分贝,漏的效率为30％。采用多层电极结构是为了在8×10~(-2)毫米~2的面积上分别地并联80个岛状漏和20个苜蓿叶片状栅。
Schottky barrier grid width of 8 millimeters mesh-source GaAs microwave power field-effect transistor has been successfully developed. At source and drain voltages of 8 and 2 GHz, the device has an output of 1.6 watts, a power gain of 5 dB and a drain efficiency of 30%. The multilayer electrode structure is used to separately connect 80 island-shaped leaks and 20 alfalfa leaf grids in an area of 8 × 10 -2 mm 2.