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利用等离子体增强化学汽相沉积(PECVD),制备了优化的α-Ge:H薄膜,并研究了其结构、光学和电学性质。通过增强氢的稀释,获得了微晶锗(μc-Ge:H)薄膜,其晶化的择优取向是<110>,而热退火使α-Ge:H薄膜晶化的择优取向是<111>。对这两种晶化行为在择优取向上的差异进行了初步的讨论,利用热退火研究α-Ge:H/α-Si:H超晶格薄膜的晶化过程和热稳定性,结果表明超晶格中起薄的锗层和硅层的晶化条件与相应的体材料有很大差别。
The optimized α-Ge: H thin films were prepared by plasma-enhanced chemical vapor deposition (PECVD) and their structures, optical and electrical properties were studied. The preferred orientation of the crystallized germanium (μc-Ge: H) thin film is <110> by enhancing hydrogen dilution, and the preferred orientation of the α-Ge: H thin film by thermal annealing is <111> . The differences in the preferential orientation between the two crystallization behaviors are discussed. The crystallization process and the thermal stability of α-Ge: H / α-Si: H superlattice thin films are studied by means of thermal annealing. Crystallization of the thin germanium layer and the silicon layer crystallization conditions and the corresponding body material are very different.