论文部分内容阅读
介绍了用脉冲激光沉积 (PLD)方法制备AlN薄膜的工作 ,在Si(10 0 )衬底上得到了光滑平整、透明度高的AlN薄膜 ,由实验结果拟合得到能隙宽度为 5 7eV。考察了衬底温度和退火温度的影响。
The preparation of AlN thin films by pulsed laser deposition (PLD) is introduced. The smooth and transparent AlN films are obtained on Si (100) substrates. The experimental results show that the energy gap width is 577V. The effects of substrate temperature and annealing temperature were investigated.