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报道了一种自对准InP/InGaAs双异质结双极晶体管的器件性能.成功制作了U型发射极尺寸为2μm×12μm的器件,其峰值共射直流增益超过300,残余电压约为0·16V,膝点电压仅为0·6V,而击穿电压约为6V.器件的截至频率达到80GHz ,最大震荡频率为40GHz .这些特性使此类器件更适合于低压、低功耗及高频方面的应用.
A device performance of self-aligning InP / InGaAs double heterojunction bipolar transistor is reported.A device with U-shaped emitter of 2μm × 12μm has been successfully fabricated with a peak cascode DC gain of more than 300 and a residual voltage of about 0 · 16V, knee voltage is only 0.6V, and the breakdown voltage is about 6V. The device’s cut-off frequency reaches 80GHz, the maximum oscillation frequency is 40GHz. These features make these devices more suitable for low voltage, low power consumption and high frequency Application.