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近十年来,分子束外延技术(简称MBE)以其独特的优点在多方面取得了令人注目的发展。本文从六个方面讨论了MBE技术目前的发展情况。MBE GaAs、Si和InGaAsP等材料的水平已可与VPE和LPE的相比。MBE生长动力学的研究已进展到对三元,四元混晶进行研究。研制器件级材料必须解决掺杂问题,Be和Si分别是MBE GaAs比较好的P型和N型掺杂剂。MBE已成功地研制出多种微波、激光和光电器件,GaAs/AlGaAs双异质结激光器的阈电流密度已降低到可和LPE的最低值相比。MBE金属-半导体,绝缘体-半导体异质结及其界面特性的研究和MBE薄膜表面的研究都有所发展。讨论了GaAs/GaAlAs和InAs/Gasb二个系列的超晶格。调制掺杂结构开辟了发展二维电子学的新途径。
In recent ten years, molecular beam epitaxy technology (referred to as MBE) has made remarkable achievements in many aspects with its unique advantages. This article discusses the current development of MBE technology from six aspects. The levels of materials such as MBE GaAs, Si and InGaAsP have been comparable to those of VPE and LPE. MBE growth kinetics has been progressing to ternary, quaternary mixed crystal research. The development of device-level materials must solve the doping problem, Be and Si are the better P-type and N-type dopants for MBE GaAs, respectively. MBE has successfully developed a variety of microwave, laser and optoelectronic devices, GaAs / AlGaAs double heterojunction laser threshold current density has been reduced to the LPE can be compared with the lowest. MBE metal-semiconductor, insulator-semiconductor heterojunction and its interfacial properties and the research of MBE film surface have been developed. Two series of superlattices of GaAs / GaAlAs and InAs / Gasb are discussed. Modulation of doped structures opens up new avenues for the development of 2D electronics.